Abstract
The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C. © 2004 American Institute of Physics.
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CITATION STYLE
Liu, P. C., Lu, C. L., Wu, Y. S., Cheng, J. H., & Ouyang, H. (2004). Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers. Applied Physics Letters, 85(21), 4831–4833. https://doi.org/10.1063/1.1823592
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