Electron-beam-induced formation of Zn nanocrystal islands in a SiO 2 layer

Abstract

Electron-beam-induced Zn nanocrystal islands were formed in a dielectric Si O2 layer. When a ZnO thin film on a p -type Si with amorphous Si Ox interface layer is subjected to a 900 °C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn2x Si1-x O2 layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with ∼7-10 nm diameter were formed and embedded within the Si O2 interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented. © 2007 American Institute of Physics.