Fabrication of molybdenum disulfide (MoS 2 ) layered thin films by atmospheric-pressure solution based mist CVD

Abstract

Recently, layered transitional metal dichalcogenide (TMD) materials which are bound by vdW forces between the layers have received much attention owing to their excellent properties. In this study, we focused on layered molybdenum disulfide (MoS2) thin film fabrication by mist CVD. Thin films were fabricated by using a precursor solution containing a mixture of hexaammonium heptamolybdate tetrahydrate ((NH 4 ) 6 Mo 7 O 24 •4H 2 O) and thiourea (CH 4 N 2 S) dissolved in methanol. As a results, raman peaks around 380 cm- 1 (E 12g ) and 410 cm -1 (A 1g ) were observed from the samples prepared at 300-400 °C. Remarkably, the growth temperature of MoS 2 thin-films by mist CVD is comparatively lower temperature than that of the traditional CVD. Furthermore, it was found that high quality MoS 2 on entire substrate was fabricated under the condition of sufficient thermal decomposition time.