A novel yellow laser candidate: Dy3+ doped Ca3NbGa3Si2O14 crystal

Abstract

In this article, a series of polycrystalline compounds of DyxCa3-xNbGa3Si2O14 (x = 0.03–0.45) were synthesized to obtain the proper Dy3+ ions doping concentration for the crystal growth. After that, a 5.58 at.% Dy:Ca3NbGa3Si2O14 (Dy:CNGS) single crystal was successfully grown by Czochralski method. Its spectral properties and Judd-Ofelt theory analysis were performed. The crystal has a relatively strong and wide absorption peak at about 453 nm with the absorption cross-section of 1.3 × 10−21 cm2 and a full width at half maximum (FWHM) of 10.2 nm. The Judd-Ofelt parameters Ω2, Ω4 and Ω6 were calculated to be 4.51, 2.93 and 0.19 × 10−20 cm2, respectively. The emission cross-section at 572 nm is 1.8 × 10−21 cm2 with a FWHM of 16.3 nm. The fluorescence time of the 4F9/2→6H13/2 transition is 0.24 ms. The results mean that Dy:CNGS crystal is a potential solid-state yellow laser material suitable for the commercial InGaN laser diode pumping.