Enhanced Hall mobility in graphene-on-electronic-grade diamond

Abstract

The outstanding electronic properties of graphene make this material a candidate for many applications, for instance, ultra-fast transistors. However, self-heating and especially the detrimental influence of available supporting substrates have impeded progress in this field. In this study, we fabricate graphene-diamond heterostructures by transferring graphene to an ultra-pure single-crystalline diamond substrate. Hall-effect measurements were conducted at 80 to 300 K on graphene Hall bars to investigate the charge transport properties in these devices. Enhanced hole mobility of 2750 cm2 V−1 s−1 could be observed at room-temperature when using diamond with reduced nitrogen ( N s 0 ) impurity concentration. In addition, by electrostatically varying the carrier concentration, an upper limit for mobility is determined in the devices. The results are promising for enabling carbon-carbon (C-C) devices for room-temperature applications.