Graphene/semiconductor silicon modified BiFeO3/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

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Abstract

We report photovoltaic response of highly transparent graphene/BiFe0.95Si0.05O3 (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (ISC 0.75mA) with 1000 fold upsurge and open-circuit-voltage (VOC∼0.45V) under standard AM 1.5 illumination through graphene. In combination, ISC of 0.63mA and VOC of 0.35V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of ISC and VOC with quick switching (<100ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows.

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Gupta, S., Medwal, R., Limbu, T. B., Katiyar, R. K., Pavunny, S. P., Tomar, M., … Katiyar, R. S. (2015). Graphene/semiconductor silicon modified BiFeO3/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows. Applied Physics Letters, 107(6). https://doi.org/10.1063/1.4928541

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