Abstract
The conventional lifetime setup was used to study Czochralski grown unintentionally p- and n- type ([n] 6 × 1017cm-3) GaSb bulk samples. Several approaches were used to analyze the data. However, it was not possible to successfully analyze the obtained spectrums with the conventional trapping model. From the analyzed data it was derived that the reason for p-type behavior of GaSb was not VGa. Additionally, the role of gallium vacancy was studied and it's effect to lifetime values are shortly discussed.
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CITATION STYLE
Kujala, J., Slotte, J., & Tuomisto, F. (2013). Acceptors in undoped GaSb; The role of vacancy defects. In Journal of Physics: Conference Series (Vol. 443). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/443/1/012042
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