Design and Simulation of Low Noise Amplifier at 10 GHz By GaN High Electron Mobility Transistor

Abstract

This paper presents the design and simulation of a 10 GHz Low Noise Amplifier (LNA) for Wireless communication systems. The simulation result has been performed by using the Agilent Advanced Design System (ADS) software. The High Electron Mobility Transistor (HEMT) based on GaAs is used for decreasing of Minimum Noise Figure (NFmin) of LNA. Also, for more decreasing NFmin of LNA radial stub elements are implemented in biasing network. We have designed a 10 GHz LNA based on three design manner basing on the lumped, the distributed and radial stub elements. The designed amplifier offers forward gain of 14.77 dB with the noise figure of 0.775 dB at 10 GHz. The input return loss (S11) is equal to -17.35 dB at 10GHz. The output return loss (S22) is equal to -10.24 dB at 10GHz. Also, the isolation (S12) of proposed structure is equal to -18 dB at 10 GHz. The simulation result have shown that the forward gain and noise figure of 10 GHz LNA are optimized Substantially with respect to the pervious works.