Fabrication technology of high-dielectric SrTiO3 thin film capacitors for microwave circuits

Abstract

Strontium titanate (SrTiO3) perovskite oxide thin films have been investigated for use as a dielectric material for by-pass (RF-shunt) capacitors in microwave monolithic integrated circuits (MMIC). This paper describes the structural and electrical features of SrTiO3 thin films and some issues related to the integration of SrTiO3 thin film on a silicon substrate, as a planar capacitor structure. The specific properties of the capacitors are found to be strongly dependent on the SrTiO3 deposition conditions, post thermal treatment and choice of the bottom electrode.