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Dislocation cores in silicon: New aspects from numerical simulations

Journal of Physics: Conference Series (2011) 281(1)
DOI: 10.1088/1742-6596/281/1/012002
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Abstract

Recent theoretical investigations of the properties of dislocation cores in silicon are reviewed. New results, obtained from numerical simulations for the non-dissociated screw and 60° dislocations, are presented and discussed in relation with experiments. © Published under licence by IOP Publishing Ltd 2011.

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Pizzagalli, L., Godet, J., Guénolé, J., & Brochard, S. (2011). Dislocation cores in silicon: New aspects from numerical simulations. In Journal of Physics: Conference Series (Vol. 281). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/281/1/012002

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