Abstract
Diamond grains were grown on Si substrates by plasma-enhanced chemical vapor deposition. Ar ion milling was applied to the diamond/Si structures. It has been found that sharp diamond cones can be formed by ion milling if diamonds are in the form of isolated grains. It has also been found that the field emission current from diamond/Si samples is drastically increased by Ar ion milling and subsequent heat treatment in vacuum.
Cite
CITATION STYLE
Asano, T., & Oobuchi, Y. (1995). Field emission from ion-milled diamond films on Si. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13(2), 431–434. https://doi.org/10.1116/1.587963
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