Novel molecular resist for EUV and electron beam lithography

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Abstract

A novel molecular resist molecule was prepared by incorporation of 1,8-diazabicycloundece-7-ene into a tert-butyloxycarbonyl protected phenol malonate group. The resist shows high-resolution capability in both extreme ultraviolet (EUV) and electron beam lithography.

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Frommhold, A., Yang, D., McClelland, A., Roth, J., Xue, X., Rosamund, M. C., … Robinson, A. P. G. (2015). Novel molecular resist for EUV and electron beam lithography. Journal of Photopolymer Science and Technology, 28(4), 537–540. https://doi.org/10.2494/photopolymer.28.537

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