Electrical conduction of AlGaN/GaN 2DEG heterostructures grown on Si(111)

Abstract

The growth of III-nitrides on Si(111) substrate by plasma assisted molecular beam epitaxy is addressed. Growth optimization of GaN layer is reported. Different III-N flux ratio, substrate temperature and buffer layer structures were chosen as optimization parameters. Significant improvement of the GaN properties is achieved using AlGaN/AlN buffers. Temperature-dependent Hall effect experiments show a complex behavior, whereby p- and n-type conductivity is observed. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.