Hot Carrier-Induced Nonlinear Photoluminescence in a Thin Indium Tin Oxide Layer Patterned by Ga Ion Beam Milling

Abstract

This paper explores the nonlinear photoluminescence emitted by indium tin oxide (ITO) thin layers patterned by focused gallium ion beam milling. Using tightly focused near-infrared femtosecond pulsed laser excitation, a broad up-converted luminescence spectrum spanning the visible is detected. The intensity of the luminescence follows a nonmonotonous relationship with milling doses and can be related to the modification of the ITO electronic band structure by the implantation of Ga ions. The shape and the power dependence of the spectrum share strong similarities with those of nonlinear photoluminescence arising from metals. The results are consistent with a nonlinear process originating from the radiative decay of photogenerated hot carriers. The thermal coefficient relating the carrier temperature to the laser intensity is determined as a function of milling dose.