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Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs

Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 (2009)
DOI: 10.1109/IWCE.2009.5091087
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Abstract

In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects. ©2009 IEEE.

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Ashok, A., Vasileska, D., Goodnick, S. M., & Hartin, O. (2009). Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. https://doi.org/10.1109/IWCE.2009.5091087

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