Class J power amplifier for 5G applications in 28 mn CMOS FD-SOI technology

Abstract

With the ongoing race to deploy the fifth genera-tion of wireless technologies, the research is directed towards the millimeter wave carrier frequencies as a result of the de-mand for high speed data and the need for more spectrum bandwidth. Beside the large bandwidth, one of the major chal-lenges of the 5G is reducing energy consumption. The power amplifier is the most critical element of the radiofrequency front-end in terms of power consumption and bandwidth. In this work, we present the design of a wideband and highly effi-cient class J power amplifier. Post-layout simulation results show a broadband behavior over 12 GHz of bandwidth, with a power added efficiency of 38 % and a saturated output power of 16.2 dBm at 28 GHz. In addition, the linearity and the effi-ciency of the power amplifier are reconfigurable with to the back-gate of the 28 nm CMOS FD-SOI technology.