Radiation induced SET impact on DG-FINFET based LC-VCO design

Abstract

In wireless communication system, the supply voltage should be as low as possible to increase operation time of the system. This shows how importance the low-power circuits are in this field. Recently, there has been considerable interest in the use of Fin type Field Effect Transistor (FinFET) technology to implement RF components such as low-noise amplifiers (LNAs), mixers, and voltage-controlled oscillators (VCOs). VCOs are critical building blocks in modern wireless communication system which is mainly used in Phase Locked Loop. This work describes designing and simulation of Double Gate (DG) FinFET based Inductor (L) and Capacitor (C) tank VCO and the radiation effect of single event transient (SET) on the topology. The LC VCO topology is implemented with 30 nm DG-FinFET technology with 1V as DC power supply voltage which oscillates at 32.61 GHz frequency, results the VCO draws 64.97 μA current and an average power consumption of 64.97 μW. The measured phase noise of the topology is -120.54dBc/Hz at 1 GHz offset frequency and Figure of Merit (FOM) is - 162.68 dBc/Hz at 1 GHz offset frequency.