Optical properties and morphology of InAs/InP (113)B surface quantum dots

Abstract

We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band kp theory in the envelope function approximation. © 2008 American Institute of Physics.