Abstract
Superior switching characteristics of SiC-MOSFET embedding SBD is demonstrated compared with conventional MOSFET and MOSFET with external SBD. Inactivation of parasitic body diode by embedding SBD enables a suppression of recovery charge during turn-on process, which results in a reduction of turn-on loss. Furthermore, elimination of external SBD reduces total chip size, or output capacitance charge, which results in a reduction of output capacitance loss.
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Tominaga, T., Hino, S., Mitsui, Y., Nakashima, J., Kawahara, K., Tomohisa, S., & Miura, N. (2019). Superior Switching Characteristics of SiC-MOSFET Embedding SBD. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (Vol. 2019-May, pp. 27–30). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ISPSD.2019.8757664
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