Growth of room-temperature 1.32-μm-emitting InAs quantum dots using {GaAs/InAs} quasi-monolayers

Abstract

InAs QDs on the strained {GaAs/InAs} quasi-monolayers (QML) with an alternative growth mechanism were grown by using molecular beam epitaxy. The photoluminescence (PL) emission peak of the InAs quantum dots (QDs) with 10 periods of strained {GaAs/InAs} QMLs was red-shifted by 180 meV at 10 K from that of the reference InAs QDs sample which had no {GaAs/InAs} QML. The InAs QDs with 10 periods of {GaAs/InAs} QMLs also showed a strong PL emission at 1.32 μm at room temperature. As the number of various periods of QMLs in the InAs QD samples was varied, the emission wavelength of the InAs QDs moved significantly toward long wavelength emission.