High temperature rapid thermal annealing of phosphorous ion implanted InAsInP quantum dots

Abstract

The effect of high temperature annealing of the InAsInP quantum dots (QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy (450 keV) phosphorous ion implantation at room temperature with doses of 5× 1011 -5× 1013 ions cm2 with subsequent high temperature (750-850 °C) rapid thermal annealing is also studied. A large implantation-induced energy shift of up to 309 meV (400 nm) is observed. The implanted samples annealed at 850 °C show reduced PL linewidth and enhanced integrated PL intensity compared to the implanted samples annealed at 750 °C. © 2007 American Institute of Physics.