A cryogenic spin-torque memory element with precessional magnetization dynamics

Abstract

We present a study of precessional magnetization switching in orthogonal spin-torque spin-valve devices at low temperatures. The samples consist of a spin-polarizing layer that is magnetized out-of-the film plane and an in-plane magnetized free and reference magnetic layer separated by non-magnetic metallic layers. We find coherent oscillations in the switching probability, characterized by high speed switching (~200 ps), error rates as low as 10−5 and decoherence effects at longer timescales (~1 ns). Our study, which is conducted over a wide range of parameter space (pulse amplitude and duration) with deep statistics, demonstrates that the switching dynamics are likely dominated by the action of the out-of-plane spin polarization, in contrast to in-plane spin-torque from the reference layer, as has been the case in most previous studies. Our results demonstrate that precessional spin-torque devices are well suited to a cryogenic environment, while at room temperature they have so far not exhibited coherent or reliable switching.