Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

Abstract

In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm2 V-1 s-1 and the carrier concentrations of 6 × 1018 cm-3 ∼ 7 × 1019 cm-3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its Hc1 and Hc2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.