Low-Temperature Solution-Based Molybdenum Oxide Memristors

Abstract

Solution-based memristors have gained significant attention in recent years due to their potential for the low-cost, scalable, and environmentally friendly fabrication of resistive switching devices. This study is focused on the fabrication and characterization of solution-based molybdenum trioxide (MoO3) memristors under different annealing temperatures (200 to 400 °C). A MoO3 ink recipe is developed using water as the main solvent, enabling a simplified and cost-effective fabrication process. Material analysis reveals the presence of a Mo6+ oxidation state and an amorphous structure in the films annealed up to 250 °C. Electrical tests confirm a bipolar resistive switching behavior in the memristors according to the valence change mechanism (VCM). Endurance tests demonstrate stable memristors, indicating their robust nature after multiple cycles. Memristors annealed at 250 °C exhibit a nonvolatile behavior with a retention time up to 105 s under ambient air conditions. The high reproducibility observed in these memristors highlights their potential for practical applications and scalability.