Organic CuTCNQ integrated in complementary metal oxide semiconductor copper back end-of-line for nonvolatile memories

Abstract

Nanowires of the organometallic semiconductor CuTCNQ were grown from TCNQ vapor in 250 nm diameter vias of a Cu back end-of-line process. Corresponding prototypes of cross-point CuCuTCNQ nanowire/Al memories exhibited nonvolatile bistable conductive switching for several ten write-erase cycles with switching currents below 10 μA and current densities 1000 times higher than for large-area devices. Scaling of memory elements was also investigated. © 2006 American Institute of Physics.