Abstract
This paper presents a three-phase cascaded five-level H-bridge quasi-switched boost inverter (CHB-qSBI). The merits of the CHB-qSBI are as follows: single-stage conversion, shoot-through immunity, buck-boost voltage, and reduced passive components. Furthermore, a PWM control method is applied to the CHB-qSBI topology to improve the modulation index. The voltage stress across power semiconductor devices and the capacitor are significantly lower using improved pulse-width modulation (PWM) control. Additionally, by controlling individual shoot-through duty cycle, the DC-link voltage of each module can achieve the same values. As a result, the imbalance problem of the DC-link voltage can be solved. A detailed analysis and operating principle with the modulation scheme and comprehensive comparison for the CHB-qSBI are illustrated. The experimental and simulation results are presented to validate the operating principle of the three-phase CHB-qSBI.
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CITATION STYLE
Tran, V. T., Nguyen, M. K., Ngo, C. C., & Choi, Y. O. (2019). Three-phase five-level cascade quasi-switched boost inverter. Electronics (Switzerland), 8(3). https://doi.org/10.3390/electronics8030296
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