Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

Abstract

Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.