Abstract
We have found that AlGaAs films grown by molecular beam epitaxy on (110) orientation tend to segregate to their constituent binaries on an extremely fine scale. However, the microscopic segregation in AlGaAs does not impede its capability of providing suitable, macroscopic barriers in the formation of heterostructures. High mobility two-dimensional electrons and holes in modulation-doped AlGaAs/GaAs(110) heterojunctions are demonstrated for the first time, with obvious implications for the combined growth of IV and III–V materials.
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CITATION STYLE
Wang, W. I., Kuan, T. S., Tsang, J. C., Chang, L. L., & Esaki, L. (1986). Segregated AlGaAs(110) grown by molecular beam epitaxy. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 4(2), 517–518. https://doi.org/10.1116/1.583413
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