Highly efficient single-layer polymer ambipolar light-emitting field-effect transistors

Abstract

Single-layer polymer light-emitting field-effect transistors (LEFETs) that yield EQEs of >8% and luminance efficiencies >28 cd A -1 are demonstrated. These values are the highest reported for LEFETs and amongst the highest values for fluorescent OLEDs. Due to the electrostatics of the ambipolar LEFET channel, LEFETs provide an inherent advantage over OLEDs in terms of minimizing exciton-polaron quenching. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.