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Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm

Electronics Letters (2014) 50(13) 948-950
DOI: 10.1049/el.2013.3257
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Abstract

The dynamic characteristics of a discrete mode laser diode fabricated in the InGaAs/InP multiple quantum well material system and emitting single mode at λ ≈ 2.0 μm are reported. Results are presented on the electro-optical bandwidth, direct modulation and gain switched performance. © The Institution of Engineering and Technology 2014.

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APA

O’Carroll, J., Byrne, D., Kelly, B., Phelan, R., Gunning, F. C. G., Anandarajah, P. M., & Barry, L. P. (2014). Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm. Electronics Letters, 50(13), 948–950. https://doi.org/10.1049/el.2013.3257

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