Luminescence decay kinetics in GaN studied by frequency domain measurements

Abstract

Carrier dynamics in high-quality GaN epilayer was investigated at two extreme excitation levels. Carrier lifetime under high excitation conditions was estimated by using light-induced transient grating technique. Measurements at extremely low excitation power density were performed by using frequency-domain fluorescence lifetime technique. The study was performed in a wide temperature range from 8 to 300 K. The results revealed the influence of donor-acceptor pair recombination and carrier trapping processes.