Abstract
This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transis-tors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A.
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Wu, C. C., Liu, C. Y., Wang, G. B., Shieh, Y. T., Chieng, W. H., & Chang, E. Y. (2021). A new gan-based device, p-cascode gan hemt, and its synchronous buck converter circuit realization. Energies, 14(12). https://doi.org/10.3390/en14123477
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