A Review of Femtosecond Laser Processing of Silicon Carbide

Abstract

Silicon carbide (SiC) is a promising semiconductor material as well as a challenging material to machine, owing to its unique characteristics including high hardness, superior thermal conductivity, and chemical inertness. The ultrafast nature of femtosecond lasers enables precise and controlled material removal and modification, making them ideal for SiC processing. In this review, we aim to provide an overview of the process properties, progress, and applications by discussing the various methodologies involved in femtosecond laser processing of SiC. These methodologies encompass direct processing, composite processing, modification of the processing environment, beam shaping, etc. In addition, we have explored the myriad applications that arise from applying femtosecond laser processing to SiC. Furthermore, we highlight recent advancements, challenges, and future prospects in the field. This review provides as an important direction for exploring the progress of femtosecond laser micro/nano processing, in order to discuss the diversity of processes used for manufacturing SiC devices.