Controlling the macroscopic electrical properties of reduced graphene oxide by nanoscale writing of electronic channels

Abstract

The allure of all-carbon electronics stems from the spread of its physical properties across all its allotropes. The scheme also harbours unique challenges, such as tunability of band gap, variability of doping and defect control. Here, we explore the technique of scanning probe tip-induced nanoscale reduction of graphene oxide (GO), which nucleates conducting, sp2 rich graphitic regions on the insulating GO background. The flexibility of direct writing is supplemented with control over the degree of reduction and tunability of band gap through macroscopic control parameters. The fabricated reduced GO channels and ensuing devices are investigated via spectroscopy and temperature and bias-dependent electrical transport and correlated with spatially resolved electronic properties, using surface potentiometry. The presence of carrier localization effects, induced by the phase-separated sp2/sp3 domains, and large local electric field fluctuations are reflected in the non-linear transport across the channels. Together, the results indicate a complex transport phenomenon, which may be variously dominated by tunnelling or variable range hopping or activated depending on the electronic state of the material.