Temperature dependence of atomic scale morphology in Si homoepitaxy between 350 and 800 °C on Si (100) by molecular beam epitaxy

Abstract

The evolution of surface morphology from the deposition of Si at 1.0 {Å}/s on Si (100) at temperatures between 350 and 800 \,^{\circ}C by molecular beam epitaxy is observed using scanning tunneling microscopy. The deposition rate and growth temperatures investigated were chosen for their relevance to device fabrication. We observe the transition in growth mode from step flow to two-dimensional islands, the properties of step edges, and the appearance of defects as a function of growth temperature during homoepitaxy.