Current controlled non-hysteresis magnetic switching in the absence of magnetic field

6Citations
Citations of this article
9Readers
Mendeley users who have this article in their library.
Get full text

Abstract

By means of local ion implantation, we investigated the influence of lateral interface on current induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in this system, the domain wall motion under electrical current can be affected by two mechanisms: symmetry breaking and current-driven Néel wall motion at the lateral interface. The dominant mechanism is symmetry breaking (current-driven Néel wall motion) at the large (small) current. Due to the competitive relationship of these two mechanisms, the non-hysteresis effect magnetic switching without an external magnetic field is obtained. Based on the non-hysteresis effect magnetic switching, we can realize AND and OR logic gates without resetting.

Cite

CITATION STYLE

APA

Li, Y., Yang, M., Yu, G., Cui, B., & Luo, J. (2022). Current controlled non-hysteresis magnetic switching in the absence of magnetic field. Applied Physics Letters, 120(6). https://doi.org/10.1063/5.0078514

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free