CMOS Backplane Technology and Its Challenge for µLEDoS AR/XR Display

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Abstract

This paper introduces the latest CMOS (Complementary MetalOxide-Silicon) backplane technology for µLEDoS AR/XR display engines. The backplane supports a display resolution of 1,280RGB x 720 and has been implemented on a 28nm Fully Depleted Silicon on Insular (FD-SOI) CMOS process in order to meet the requirements such as performance, power, and pixel size. The area of a single pixel is 4.95µm x 4.95µm achieving higher than 5,000 PPI in RGB-color mode. Each pixel contains 3 independent sub-pixel drivers and one dependent driver assigned for a red LED. Each sub-pixel driver includes a 10-bit video SRAM memory, PWM (Pulse Width Modulation) control logic block, a constant current generator, and LED driver stage to drive red, green, or blue LEDs. The backplane also integrates necessary image processing functions such as De-mura compensation, dead-pixel compensation, and digital gamma generation. The top surface of the backplane wafer is also prepared for a wafer-to-wafer hybridization bonding between the CMOS wafer and an LED wafer.

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APA

Lee, M., Seong, J., Jang, J., Lee, J., & Jeon, J. (2024). CMOS Backplane Technology and Its Challenge for µLEDoS AR/XR Display. In Digest of Technical Papers - SID International Symposium (Vol. 55, pp. 976–978). John Wiley and Sons Inc. https://doi.org/10.1002/sdtp.17699

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