A novel characterization scheme for organic field-effect transistors

Abstract

We present a novel organic field-effect transistor (OFET) characterization scheme that allows for the rapid measurement of both, mobility and threshold voltage, in OFETs. The scheme uses a simple measurement algorithm and is based on cheap, standard electronic components. Results agree excellently with conventional characterization, even for moderate mobilities. The algorithm can be easily automated, which is believed to make it the method of choice where fast response is required, e.g. when OFETs are used as sensors. © 2007 IOP Publishing Ltd.