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Investigation of deep levels in bulk GaN

  • Duc T
Linköping University Electronic Press, (2014)
DOI: 10.3384/lic.diva-112262
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Abstract

Härtill 3 uppsatser. Licentiatavhandling (sammanfattning)--Linköping: Linköpings universitet, 2014. This thesis is focused on electrical characterization of defects in bulk GaN grown by halide vapor phase epitaxy (HVPE) by using deep level transient spectroscopy.

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Duc, T. T. (2014). Investigation of deep levels in bulk GaN. Investigation of deep levels in bulk GaN. Linköping University Electronic Press. https://doi.org/10.3384/lic.diva-112262

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