Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon

Abstract

The critical aspects of the epitaxial growth of alkaline-earth oxides on silicon are described in detail. The step by step transition from the silicon to the alkaline-earth oxide as shown through reflection high energy electron diffraction is presented, with emphasis placed on the favorable interface stability, oxidation, structural, and strain considerations for each stage of the growth via molecular beam epitaxy.