Optical and Electrical Characteristics of Layered Semiconductor p-InSe Doped with Sb

Abstract

The impurity levels in Sb-doped p-InSe have been investigated using photoluminescence (PL), Hall effect and optical absorption measurements. The emission band at 1.02eV is observed in the PL spectra of the samples doped with 0.05 to 0.5 at.% Sb. From the dependence of the excitation intensity of the PL intensity and peak energy, we find that the 1.02eV emission band is due to the transition related to a donor-acceptor pair. The deep acceptor level located approximately 0.4 eV above the valence band is detected using the Hall effect and optical absorption measurements. The deep acceptor level is probably associated with the defects formed by Sb atoms in the interlayer.