Defect-Driven MoS2 Nanosheets toward Enhanced Sensing Sensitivity

Abstract

In this study, S-deficient MoS2 was prepared using proton irradiation and then applied as sensing materials for the detection of NO2 gas. First, bulk MoS2 was treated by ultrasonics to produce 2D nanosheets of MoS2, which were subsequently bombarded by a flux of high-energy protons, resulting in the appearance of structural defects throughout MoS2. The proton fluxes were adjusted to different densities of 1 × 1011, 1 × 1012, 1 × 1013, and 1 × 1014 ions/cm2. The effects of proton irradiation on the defects, also referred to as atomic vacancies, were systematically investigated using Raman measurements to locate the E12g and A1g modes and X-ray photoelectron spectroscopy to determine the binding energy of Mo 3d and S 2p orbitals. It was revealed that the density of proton irradiation greatly affects the degree of S atom vacancies in irradiated MoS2, while also enhancing the n-type semiconducting behaviors of MoS2. The vacancy-rich MoS2 was then demonstrated to exhibit a higher response to NO2 gas compared to that of nonirradiated MoS2, showing a 4-fold increase in response within a concentration range from 1 to 20 ppm. These results could pave the way for new approaches to fabricating sensing materials.