A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs

Abstract

In this paper, the quantum confinement and short channel effects of Si, Ge, and (Formula presented.) As n-MOSFETs are evaluated. Both bulk and double-gate structures are simulated using a quantum energy transport model based on Fermi–Dirac statistics. Nonparabolic band effects are further considered. The QET model allows us to simulate carrier transport including quantum confinement and hot carrier effects. The charge control by the gate is reduced in the Ge and (Formula presented.) As bulk n-MOSFETs due to the low effective mass and high permittivity. This charge control reduction induces the degradation of short channel effects. In double-gate structures, different improvements of drain induced barrier lowering (DIBL) and subthreshold slope (SS) are seen. The double-gate structure is effective in the suppression of DIBL for all channel materials. The SS degradation depends on channel materials even in double-gate structure.