Fullerene-derivative-embedded nanogap field-effect-transistor and its nonvolatile memory application

Abstract

A nanogap field-effect transistor with PCBM, a C60 derivative, is demonstrated, and evidence for nanogap filling is provided. The transistor serves as a charge-based detector to identify the imbibitions of the nanoscale capillary channel originating from the high-electron receptivity of the PCBM. In an extended application, a 2-bit-per-cell nonvolatile memory operation is performed, and the transistor is verified as a promising candidate without interference from adjacent memory cells. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA Weinheim.