Abstract
The rate-equation model of surface segregation [Mater. Res. Soc. Symp. Proc. 618, 185 (2000)] is applied to InGaN and InGaAlN plasma-enhanced MBE, aiming at the analysis of factors affecting the composition profiles in nitride heterostructures. Delayed In incorporation into a crystal and In "tailing" in a cap layer are found to be affected primarily by the growth temperature and elastic strain due to the lattice mismatch with the underlying layer. The ways to improve the abruptness of the epilayer interfaces - In pre-deposition, growth interruption, and temperature rise - are examined for typical InGaN/GaN quantum wells.
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CITATION STYLE
Karpov, S. Y., & Makarov, Y. N. (2001). Surface Segregation in Group-III Nitride MBE. Physica Status Solidi (A) Applied Research, 188(2), 611–614. https://doi.org/10.1002/1521-396X(200112)188:2<611::AID-PSSA611>3.0.CO;2-Z
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