Transition from rectification to resistive-switching in Ti/MgF2/Pt memory

Abstract

Magnesium fluoride is a promising candidate for resistive-switching random access memory (RRAM) with biodegradable property. However, the underlying resistive-switching (RS) mechanism and conduction mechanism in MgF2 material is still not fully studied, which limits the further performance optimization. In this work, we have demonstrated the rectification and bipolar RS behaviors in Ti/MgF2/Pt device. The un-Formed device exhibits stable rectifying characteristics, with a rectifying ratio of ∼103 at ±3 V. Furthermore, transition from rectification mode to RS behavior can be achieved by a Forming process. Then the analogue switching properties with high uniformity was obtained with quasi-DC sweeps, and gradual modulation of multi-state was further realized. At last, the conduction and switching mechanism was discussed.