Gallium phosphide as a new material for anodically bonded atomic sensors

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Abstract

Miniaturized atomic sensors are often fabricated using anodic bonding of silicon and borosilicate glass. Here we describe a technique for fabricating anodically bonded alkali-metal cells using GaP and Pyrex. GaP is a non-birefringent semiconductor that is transparent at alkali-metal resonance wavelengths, allowing new sensor geometries. GaP also has a higher thermal conductivity and lower He permeability than borosilicate glass and can be anodically bonded below 200 °C, which can also be advantageous in other vacuum sealing applications. © 2014 Author(s).

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APA

Dural, N., & Romalis, M. V. (2014). Gallium phosphide as a new material for anodically bonded atomic sensors. APL Materials, 2(8). https://doi.org/10.1063/1.4891375

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