The study of the oxidation of thin Ti films by neutron reflectometry

Abstract

Neutron reflectometry is found to be quite sensitive to oxidation of very thin layers of Ti. Preliminary results of the study of oxidation of thin Ti films in air are represented. The thickness of the oxide layers formed in air at room temperature on Ti films of thickness 20, 10 and 5 nm (as sputtered) is found to be 2.9±0.3, 3.6±0.3 and 6.1±0.3 nm, respectively. The annealing at temperatures in the range 100-300°C leads to the growth in the oxide layer thickness and in roughness of both (air/oxide and oxide/metal) interfaces. The study of the oxidation of thin Ti films is of interest for improvement of polarizing neutron mirrors and supermirrors.