An apparatus for direct current ion beam sputtering is described which incorporates some new features, specifically with respect to target and plasma current control. In conjunction with a radiotracer technique it is demonstrated how resolution and sensitivity of depth profiling can be substantially enhanced by reduction of the ion energy and correction for after effects in sputtering. Investigations of metal diffusion in polymers and isotope effect measurements in metallic glasses are presented as examples.
CITATION STYLE
Faupel, F., Hüppe, P. W., Rätzke, K., Willecke, R., & Hehenkamp, Th. (1992). An apparatus for ion-beam sputtering and its application to high-resolution radiotracer depth profiling of diffusion samples. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 10(1), 92–97. https://doi.org/10.1116/1.578072
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