InGaN/GaN nanopillar-array light emitting diodes

Abstract

GaN light emitting diodes were fabricated from arrays of nanopillars with embedded InGaN quantum wells. InGaN heterostructures were grown by MOCVD on n-type GaN templates and pillars were fabricated by laser interference lithography and subsequent reactive ion etching and annealing. The tops of the pillars were coalesced by lateral growth of p-type GaN by MBE forming a planar contact layer. This structure enables integration with standard planar processing while taking advantage of the nanopillar structure. LEDs were fabricated and characterized by electroluminescence, current-voltage, and output power vs. current measurements. The devices showed rectifying behavior with a turn-on voltage of 3 V and electroluminescence peak at 400 nm. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.